Gate-Extension Overlap Control by Sb Tilt Implantation
نویسندگان
چکیده
Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects. key words: MOSFET, extension, gate, overlap, tilt implantation, Sb
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ورودعنوان ژورنال:
- IEICE Transactions
دوره 90-C شماره
صفحات -
تاریخ انتشار 2007